Title :
RF power devices for wireless communications
Author_Institution :
Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA
Abstract :
A wide variety of semiconductor devices are used in wireless power amplifiers. This paper will review the advantages and disadvantages of these devices for handheld and infrastructure applications.
Keywords :
UHF bipolar transistors; UHF field effect transistors; UHF integrated circuits; UHF power amplifiers; cellular radio; heterojunction bipolar transistors; power bipolar transistors; power field effect transistors; CDMA; DCS1800; GSM900; RF power devices; WCDMA; cellphones; handheld applications; infrastructure applications; wireless communications; wireless power amplifiers; Distributed control; FETs; GSM; Gallium arsenide; Heterojunction bipolar transistors; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Wireless communication;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7246-8
DOI :
10.1109/RFIC.2002.1012069
