DocumentCode :
1839186
Title :
Impact of interconnect technology scaling on SOC design methodologies
Author :
Nagaraj, N.S. ; Hunter, William R. ; Chidambaram, P.R. ; Garibay, Ty ; Narasimha, Usha ; Hill, Anthony ; Shichijo, Hisashi
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fYear :
2005
fDate :
6-8 June 2005
Firstpage :
71
Lastpage :
73
Abstract :
The impact of interconnect technology scaling on RC delay is a well-researched topic. This paper provides a fresh perspective on the impact of interconnect technology scaling on SOC designs. The impact of intra-cell RC parameters on circuit performance is described. The importance of managing the intra-cell RC scaling for low power designs is emphasized. The impact of fill metal and CMP on analog circuits is illustrated. The significance of accurate RC extraction for validating the performance and signal integrity of SOC designs is discussed. Using a 64M transistor SOC design, the effects of noise and EM reliability are highlighted. The impact of inductance on clock skew, noise and reliability are discussed.
Keywords :
chemical mechanical polishing; electromigration; integrated circuit design; integrated circuit interconnections; integrated circuit noise; integrated circuit reliability; low-power electronics; system-on-chip; CMP; EM reliability; RC delay; RC extraction; SOC design; SOC noise; analog circuit fill metal effects; clock skew; inductance effects; interconnect technology scaling effects; intra-cell RC parameters; intra-cell RC scaling; low power design; noise effects; signal integrity; Analog circuits; Circuit noise; Circuit optimization; Clocks; Delay; Design methodology; Energy management; Inductance; Integrated circuit interconnections; Signal design;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International
Print_ISBN :
0-7803-8752-X
Type :
conf
DOI :
10.1109/IITC.2005.1499928
Filename :
1499928
Link To Document :
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