• DocumentCode
    1839228
  • Title

    A plausible model and solutions for an HSQ-related volume shrinkage of aluminum landing pad

  • Author

    Cho, Kang-Sik ; Kim, Gyu-Chul ; Chun, Kee-Moon

  • Author_Institution
    SRAM 2-Team, Memory Div., Samsung Electronics, Co, Yongin City, South Korea
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    243
  • Lastpage
    246
  • Abstract
    When low k HSQ (Hydrogen Silsesquiozane) with DOM (Direct-on-Metal) technique is employed for mass-production, an unusual HSQ-related problem of metal volume shrinkage might occur at relatively small metal patterns such as landing pads, leading to yield loss. In this work, we have set up a plausible model for the mechanism of the shrinkage, presented the results from some split experiments conducted on the basis of the model, and finally proposed some ways to solve the problem by optimizing both fabrication processes and layout design
  • Keywords
    aluminium; chlorine; integrated circuit layout; integrated circuit manufacture; integrated circuit metallisation; semiconductor process modelling; shrinkage; Al; Al landing pad; HSQ-related volume shrinkage; O2; O2 ashing time optimisation; direct-on-metal technique; fabrication processes optimisation; hydrogen silsesquiozane; layout design optimisation; mass production; metal etching; metal patterns; oxide liner; shrinkage mechanism model; yield loss; Aluminum; Atherosclerosis; Design optimization; Etching; Fabrication; Large scale integration; Metallization; Process design; Random access memory; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing Symposium, 2001 IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-6731-6
  • Type

    conf

  • DOI
    10.1109/ISSM.2001.962958
  • Filename
    962958