Title :
A plausible model and solutions for an HSQ-related volume shrinkage of aluminum landing pad
Author :
Cho, Kang-Sik ; Kim, Gyu-Chul ; Chun, Kee-Moon
Author_Institution :
SRAM 2-Team, Memory Div., Samsung Electronics, Co, Yongin City, South Korea
Abstract :
When low k HSQ (Hydrogen Silsesquiozane) with DOM (Direct-on-Metal) technique is employed for mass-production, an unusual HSQ-related problem of metal volume shrinkage might occur at relatively small metal patterns such as landing pads, leading to yield loss. In this work, we have set up a plausible model for the mechanism of the shrinkage, presented the results from some split experiments conducted on the basis of the model, and finally proposed some ways to solve the problem by optimizing both fabrication processes and layout design
Keywords :
aluminium; chlorine; integrated circuit layout; integrated circuit manufacture; integrated circuit metallisation; semiconductor process modelling; shrinkage; Al; Al landing pad; HSQ-related volume shrinkage; O2; O2 ashing time optimisation; direct-on-metal technique; fabrication processes optimisation; hydrogen silsesquiozane; layout design optimisation; mass production; metal etching; metal patterns; oxide liner; shrinkage mechanism model; yield loss; Aluminum; Atherosclerosis; Design optimization; Etching; Fabrication; Large scale integration; Metallization; Process design; Random access memory; Tungsten;
Conference_Titel :
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-6731-6
DOI :
10.1109/ISSM.2001.962958
