Reliability of latchup characterization procedures

Author

Reczek, W. ; Bonner, F. ; Murphy, B.

Author_Institution

Siemens AG, Munich, West Germany

fYear

1990

fDate

5-7 March 1990

Firstpage

51

Lastpage

54

Abstract

Three different well bias concepts are studied in detail under worst-case (power-on) conditions to evaluate the reliability of three distinct latchup characterization methods. An electrical method shows the most reliable results for the detection of latchup occurrence. A laser scanning method is the most reliable for localization of latchup susceptible regions. While the imaging of faint light is useful for detecting hot electrons and transistors in saturation, it is of little value for latchup observations.<>

Keywords

CMOS integrated circuits; integrated circuit technology; integrated circuit testing; reliability; detecting hot electrons; detection of latchup occurrence; electrical method; imaging of faint light; laser scanning method; latchup characterisation procedures reliability; latchup characterisation test structures; latchup characterization methods; latchup characterization procedures; latchup observations; localization of latchup susceptible regions; well bias concepts; worst-case; Aluminum; Bonding; CMOS technology; Character generation; Circuit testing; Diodes; Equivalent circuits; MOS devices; Power generation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1990. ICMTS 1990. Proceedings of the 1990 International Conference on

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/ICMTS.1990.67879

Filename

67879