Title :
Reliability of latchup characterization procedures
Author :
Reczek, W. ; Bonner, F. ; Murphy, B.
Author_Institution :
Siemens AG, Munich, West Germany
Abstract :
Three different well bias concepts are studied in detail under worst-case (power-on) conditions to evaluate the reliability of three distinct latchup characterization methods. An electrical method shows the most reliable results for the detection of latchup occurrence. A laser scanning method is the most reliable for localization of latchup susceptible regions. While the imaging of faint light is useful for detecting hot electrons and transistors in saturation, it is of little value for latchup observations.<>
Keywords :
CMOS integrated circuits; integrated circuit technology; integrated circuit testing; reliability; detecting hot electrons; detection of latchup occurrence; electrical method; imaging of faint light; laser scanning method; latchup characterisation procedures reliability; latchup characterisation test structures; latchup characterization methods; latchup characterization procedures; latchup observations; localization of latchup susceptible regions; well bias concepts; worst-case; Aluminum; Bonding; CMOS technology; Character generation; Circuit testing; Diodes; Equivalent circuits; MOS devices; Power generation; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1990. ICMTS 1990. Proceedings of the 1990 International Conference on
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/ICMTS.1990.67879
