Title :
CVD copper metal for poly-Si thin film transistor
Author :
He, Shusheng ; Nguyen, Tue
Author_Institution :
Sharp Microelectron. Technol. Inc., Camas, WA, USA
Abstract :
Due to the large size of AMLCD panels, the use of Cu lines in the panels is important to improve display performance. By using a TiN-Cu-TiN structure, we can use CVD copper lines as gate and source lines for poly-Si TFTs. The poly-Si TFTs using Cu have the same characteristics as TFTs using other metal lines
Keywords :
chemical interdiffusion; chemical vapour deposition; copper; diffusion barriers; elemental semiconductors; liquid crystal displays; semiconductor device metallisation; silicon; thin film transistors; AMLCD panels; CVD copper lines; CVD copper metal; Cu lines; Si; TiN-Cu-TiN structure; TiN-Cu-TiN-Si; display performance; gate lines; metal lines; poly-Si TFTs; poly-Si thin film transistor; source lines; Annealing; Conductivity; Copper; Displays; Glass; Plasma temperature; Silicon; Substrates; Thin film transistors; Tin;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704930
