Title :
An active SiGe sub-harmonic direct-conversion receiver front-end design for 5-6 GHz band applications
Author :
Svitek, R. ; Johnson, D. ; Raman, S.
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
This paper describes a packaged SiGe RF front-end design for use in the Unlicensed National Information Infrastructure (U-NII) bands. The front-end is based on a sub-harmonic direct-conversion architecture and is composed of an LNA, I and Q x2 sub-harmonic mixers (SHMs), and an LO conditioning chain. The receiver is completely differential and is designed for operation from a 3.3 V supply. Simulated performance shows >25 dB conversion gain, 6.8 dB noise figure (cascode LNA), 0/spl deg/ I/Q phase imbalance, and 39.1 mA total current consumption. To the authors´ knowledge, this is the first 5-6 GHz SiGe active sub-harmonic direct-conversion receiver design presented in literature.
Keywords :
Ge-Si alloys; MMIC amplifiers; MMIC mixers; bipolar MMIC; harmonics; microwave links; radio receivers; semiconductor materials; 25 dB; 3.3 V; 39.1 mA; 5 to 6 GHz; 6.8 dB; LNA; LO conditioning chain; SiGe HBTs; SiGe heterojunction bipolar transistors; U-NII bands; Unlicensed National Information Infrastructure bands; differential topology; direct-conversion receiver; packaged SiGe RF front-end design; second-order distortion minimization; sub-harmonic direct-conversion architecture; sub-harmonic mixers; Bandwidth; Business; Circuits; Filters; Germanium silicon alloys; Noise figure; Performance gain; Radio frequency; Semiconductor device packaging; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7246-8
DOI :
10.1109/RFIC.2002.1012075
