DocumentCode
1839383
Title
Yield improvement by avoiding a metal chemical reaction in the metal etching post-treatment
Author
Suzuki, Tamotsu ; Katoh, Ikuo ; Mafune, Yoshiyuki
Author_Institution
Fujitsu Ltd., Fukushima, Japan
fYear
2001
fDate
2001
Firstpage
255
Lastpage
258
Abstract
As semiconductor devices have been manufactured, a short circuit between metal interconnects is one of the major causes of lower product yields. There are many causes for interconnect short circuits. Increasingly complex semiconductor manufacturing processes these years cause micro interconnect short circuits in metal chemical reaction during wet posttreatment. We focused on and studied these interconnect short circuits. Wet post-treatment performed after metal interconnect etching is purposed to eliminate by-products that adhere to the metal interconnect during etching. However, metal components elute into the post, wet treatment chemicals during post-treatment and furthermore they are segregated out between interconnects by metal chemical reaction. We analyzed the symptom, and designed and implemented countermeasures
Keywords
etching; integrated circuit interconnections; integrated circuit metallisation; integrated circuit yield; surface cleaning; interconnect short circuits; metal chemical reaction avoidance; metal etching post-treatment; metal interconnects; semiconductor manufacturing; wet posttreatment; yield improvement; Chemical analysis; Chemical processes; Circuit stability; Failure analysis; Integrated circuit interconnections; Integrated circuit yield; Manufacturing processes; Semiconductor device manufacture; Semiconductor devices; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-6731-6
Type
conf
DOI
10.1109/ISSM.2001.962961
Filename
962961
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