DocumentCode :
1839383
Title :
Yield improvement by avoiding a metal chemical reaction in the metal etching post-treatment
Author :
Suzuki, Tamotsu ; Katoh, Ikuo ; Mafune, Yoshiyuki
Author_Institution :
Fujitsu Ltd., Fukushima, Japan
fYear :
2001
fDate :
2001
Firstpage :
255
Lastpage :
258
Abstract :
As semiconductor devices have been manufactured, a short circuit between metal interconnects is one of the major causes of lower product yields. There are many causes for interconnect short circuits. Increasingly complex semiconductor manufacturing processes these years cause micro interconnect short circuits in metal chemical reaction during wet posttreatment. We focused on and studied these interconnect short circuits. Wet post-treatment performed after metal interconnect etching is purposed to eliminate by-products that adhere to the metal interconnect during etching. However, metal components elute into the post, wet treatment chemicals during post-treatment and furthermore they are segregated out between interconnects by metal chemical reaction. We analyzed the symptom, and designed and implemented countermeasures
Keywords :
etching; integrated circuit interconnections; integrated circuit metallisation; integrated circuit yield; surface cleaning; interconnect short circuits; metal chemical reaction avoidance; metal etching post-treatment; metal interconnects; semiconductor manufacturing; wet posttreatment; yield improvement; Chemical analysis; Chemical processes; Circuit stability; Failure analysis; Integrated circuit interconnections; Integrated circuit yield; Manufacturing processes; Semiconductor device manufacture; Semiconductor devices; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-6731-6
Type :
conf
DOI :
10.1109/ISSM.2001.962961
Filename :
962961
Link To Document :
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