Title :
Performance of a CMOS Bluetooth transceiver IC with copper RF passives
Author :
Doan, M.T. ; Yin, Qinye ; Sze, K.E. ; Khannur, Pradeep Basappa ; Rustagi, Subhash C. ; Jinglin, S. ; Pang ; Foo, D. ; Ajjikuttira, A.B.
Author_Institution :
Inst. of Microelectron., Singapore, Singapore
Abstract :
On-chip copper inductors, MIM capacitors and precision resistors in a novel, low-cost process are described. A CMOS transceiver for Bluetooth was realized with these new RF passive components and compared with the same IC realized in a commercial 0.35 /spl mu/m CMOS process with Al metalization. In a low-noise amplifier (LNA), a gain improvement of around 5 dB and a noise-figure reduction of 1.2 dB were observed. For the image-reject mixer (IRM), the conversion gain improved by 3.5 dB. The output power of the power amplifier (PA) increased by 1.5 dB. For the phase locked loop (PLL) frequency synthesizer, the settling time was reduced to almost half.
Keywords :
CMOS integrated circuits; MIM devices; UHF integrated circuits; capacitors; copper; digital radio; frequency hop communication; inductors; integrated circuit technology; resistors; spread spectrum communication; transceivers; 0.35 micron; CMOS Bluetooth transceiver IC; CMOS RFIC; LNA; MIM capacitors; PLL frequency synthesizer; RF passive components; conversion gain; gain improvement; image-reject mixer; low-cost process; low-noise amplifier; noise figure reduction; on-chip Cu inductors; phase-locked loop; power amplifier; precision resistors; settling time reduction; Bluetooth; CMOS integrated circuits; CMOS process; Copper; Inductors; Phase locked loops; Power amplifiers; Radio frequency; Radiofrequency integrated circuits; Transceivers;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7246-8
DOI :
10.1109/RFIC.2002.1012080
