Performance of a CMOS Bluetooth transceiver IC with copper RF passives

Author

Doan, M.T. ; Yin, Qinye ; Sze, K.E. ; Khannur, Pradeep Basappa ; Rustagi, Subhash C. ; Jinglin, S. ; Pang ; Foo, D. ; Ajjikuttira, A.B.

Author_Institution

Inst. of Microelectron., Singapore, Singapore

fYear

2002

fDate

3-4 June 2002

Firstpage

415

Lastpage

418

Abstract

On-chip copper inductors, MIM capacitors and precision resistors in a novel, low-cost process are described. A CMOS transceiver for Bluetooth was realized with these new RF passive components and compared with the same IC realized in a commercial 0.35 /spl mu/m CMOS process with Al metalization. In a low-noise amplifier (LNA), a gain improvement of around 5 dB and a noise-figure reduction of 1.2 dB were observed. For the image-reject mixer (IRM), the conversion gain improved by 3.5 dB. The output power of the power amplifier (PA) increased by 1.5 dB. For the phase locked loop (PLL) frequency synthesizer, the settling time was reduced to almost half.

Keywords

CMOS integrated circuits; MIM devices; UHF integrated circuits; capacitors; copper; digital radio; frequency hop communication; inductors; integrated circuit technology; resistors; spread spectrum communication; transceivers; 0.35 micron; CMOS Bluetooth transceiver IC; CMOS RFIC; LNA; MIM capacitors; PLL frequency synthesizer; RF passive components; conversion gain; gain improvement; image-reject mixer; low-cost process; low-noise amplifier; noise figure reduction; on-chip Cu inductors; phase-locked loop; power amplifier; precision resistors; settling time reduction; Bluetooth; CMOS integrated circuits; CMOS process; Copper; Inductors; Phase locked loops; Power amplifiers; Radio frequency; Radiofrequency integrated circuits; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE

Conference_Location

Seattle, WA, USA

ISSN

1529-2517

Print_ISBN

0-7803-7246-8

Type

conf

DOI

10.1109/RFIC.2002.1012080

Filename

1012080