Title :
Behavior of vacancies in EP-Cu films by positron-annihilation lifetime spectroscopy and its impact on SIV phenomena
Author :
Ogawa, Shlnichi ; Shoji, Fumito ; Ohdaira, Toshiyuki ; Suzuki, Ikuo ; Shimada, Masanobu ; Suzuki, Ryoichi
Author_Institution :
Back-End-Process Unit Tech. Group, Semicond. Leading Edge Technol. Inc., Tsukuba, Japan
Abstract :
The behavior of vacancies in electroplated-Cu films has been characterized by a positron-annihilation lifetime spectroscopy (PALS) method correlated with stress-induced voiding (SIV) phenomena. Positron lifetime showed inverse correlation with sheet resistance, and Cu films plated with lower plating currents showed less lifetime (τ) and intensity (I) of long-lifetime components than those plated with higher currents with less SIV failures.
Keywords :
copper; electroplated coatings; integrated circuit interconnections; integrated circuit metallisation; positron annihilation; spectroscopy; voids (solid); Cu; PALS; SIV failures; SIV phenomena; electroplated film vacancies; plating current; positron-annihilation lifetime spectroscopy; sheet resistance; stress-induced voiding; Annealing; Electric resistance; Electrons; Gamma ray detection; Grain size; Positrons; Pulse measurements; Semiconductor films; Spectroscopy; Transistors;
Conference_Titel :
Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International
Print_ISBN :
0-7803-8752-X
DOI :
10.1109/IITC.2005.1499940
