DocumentCode
1839487
Title
GaAs/GaAlAs quantum well infrared detector with bias-tuned wavelength and large absorption band-width
Author
Du, Chun-Xia ; Deng, Jun ; Li, Qun ; Shen, Guang-Di
Author_Institution
Dept. of Electron. Eng., Beijing Polytech. Univ., China
fYear
1995
fDate
24-28 Oct 1995
Firstpage
736
Lastpage
738
Abstract
A new type of GaAs/GaAlAs quantum well infrared photodetectors with two different structures and features has been designed. For the first one, the detecting wavelength can be tuned by bias, and for the second one, the large absorption bandwidth can be obtained. They have better performances than that of the conventional GaAs/GaAlAs quantum well infrared photodetectors. They have a potential future. Simulation and preliminary experiments have been performed
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; semiconductor quantum wells; GaAs-GaAlAs; absorption bandwidth; bias-tuned wavelength; detecting wavelength; quantum well infrared detector; simulation; Charge carrier processes; Doping; Electromagnetic wave absorption; Electrons; Energy states; Gallium arsenide; Infrared detectors; Poisson equations; Radiation detectors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.503544
Filename
503544
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