DocumentCode :
1839496
Title :
Characterization algorithm of failure distribution for LSI yield improvement
Author :
Sugimoto, Masaaki ; Tanaka, Mikio
Author_Institution :
Anal. Technol. Dev. Div., NEC Corp., Kanagawa, Japan
fYear :
2001
fDate :
2001
Firstpage :
275
Lastpage :
278
Abstract :
This paper describes an improvement in our algorithm, which can efficiently characterize a process-induced random failure distribution and a design-induced systematic failure distribution from unknown-induced failure distributions of a memory LSI, to predict a reason for yield degradation in it. The algorithm analyzes a function "T(f) isn\´t greater than 1or not" related to kind and content of "f". The "f" is a divisor of distances between failure-pairs. We have expanded the algorithm, which can pick out 7 characteristic failure distributions by using relationship between the failure densities and the function "T(f)"
Keywords :
failure analysis; integrated circuit yield; large scale integration; LSI yield; characterization algorithm; design-induced systematic failure distribution; failure distribution; process-induced random failure distribution; Algorithm design and analysis; Degradation; Failure analysis; Histograms; Large scale integration; Mathematics; Moore´s Law; National electric code; Shape; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-6731-6
Type :
conf
DOI :
10.1109/ISSM.2001.962966
Filename :
962966
Link To Document :
بازگشت