Title :
HREM analysis of ultra-thin oxides
Author :
Sinclair, R. ; Niwa, M. ; Kouzaki, T.
Author_Institution :
Dept. of Mater. Sci. & Eng., Stanford Univ., CA, USA
Abstract :
Ultra-thin SiO2 layers on Si (e.g., sub-10 nm) will be increasingly important in future VLSI devices. Precise control of thickness and interface roughness are important parameters. High resolution electron microscopy (HREM) is extremely effective for characterizing such features, as is illustrated here for gate oxides and tunneling oxides
Keywords :
electron microscopy; insulating thin films; integrated circuit technology; oxidation; silicon compounds; 10 nm; HREM analysis; SiO2-Si; VLSI device; gate oxide; high resolution electron microscopy; interface roughness; thickness; tunneling oxide; ultra-thin oxide; Electron microscopy; Fabrication; Image resolution; Lattices; Rough surfaces; Spatial resolution; Surface cleaning; Surface roughness; Surface treatment; Tunneling;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503545
