Title :
A non-traditional approach to resolving multi-layer process-induced metal voiding
Author :
Doan, Samantha L. ; Ang, Boon-Yong
Author_Institution :
Adv. Micro Devices Inc., Sunnyvale, CA, USA
Abstract :
The effective use of SRAM bitmap, end-of-line failure analyses, in-line electron beam defect inspections and focused ion beam (FIB) to identify and resolve an integration-related metal voiding issue is demonstrated in this paper. Because the voiding mechanism was due to a post-metal, multi-layer process interaction, conventional in-line optical defect inspections failed to provide useful information. Electron beam defect inspections and FIB, on the other hand, provided a fast and accurate in-line assessment of the problem, thus enabling a timely resolution of this yield issue
Keywords :
SRAM chips; electron beam applications; failure analysis; focused ion beam technology; inspection; integrated circuit yield; voids (solid); SRAM bitmap; end-of-line failure analysis; focused ion beam; in-line electron beam defect inspection; in-line optical defect inspection; integrated circuit yield; multi-layer process-induced metal voiding; Corrosion; Electron beams; Electron optics; Etching; Failure analysis; Inspection; Optical device fabrication; Random access memory; Testing; Voltage;
Conference_Titel :
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-6731-6
DOI :
10.1109/ISSM.2001.962967