Title :
Improvements to performance of spiral inductors on insulators
Author :
Kelly, D. ; Wright, F.
Author_Institution :
Peregrine Semicond. Corp., San Diego, CA, USA
Abstract :
The performance of spiral inductors on insulating substrates is far superior to ones fabricated in bulk CMOS or BiCMOS processes. In spite of this, SOI inductors are generally not satisfactory for very low noise or low insertion loss circuits. This work studies high frequency effects on current density In Inductors and discusses improvements In metallization and layout. Based on this research, a 5.5 nH inductor has been fabricated on sapphire with a 540 /spl mu/m diameter and 4.5 /spl mu/m thick aluminum, resulting in a quality factor of 25 at 2 GHz.
Keywords :
Q-factor; UHF integrated circuits; aluminium; current density; inductors; integrated circuit metallisation; sapphire; silicon-on-insulator; skin effect; substrates; 2 GHz; 270 micron; 4.5 micron; Al metallization; Al-Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/; RFICs; Si; current density; high frequency effects; insulating substrates; layout improvement; metallization improvement; proximity effect current crowding; sapphire; self-inductance; skin effect; spiral inductors; BiCMOS integrated circuits; CMOS process; Circuit noise; Current density; Frequency; Inductors; Insertion loss; Insulation; Metallization; Spirals;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7246-8
DOI :
10.1109/RFIC.2002.1012084
