DocumentCode :
1839587
Title :
Electromigration threshold in copper interconnects and consequences on lifetime extrapolations
Author :
Ney, D. ; Federspiel, X. ; Girault, V. ; Thomas, O. ; Gergaud, P.
Author_Institution :
CR&D labs, STMicroelectronics, Crolles, France
fYear :
2005
fDate :
6-8 June 2005
Firstpage :
105
Lastpage :
107
Abstract :
Electromigration in interconnects is a major reliability concern for integrated circuits, which leads to aggressive design rules. These rules can be lightened by taking advantage of the Blech effect in extrapolated lifetimes. In the present paper is reported the critical product (jL)c for copper-oxide interconnects measured at 250°C, 300°C and 350°C from electron-migration lifetime tests. The existence of this threshold product implies an increase of n values from Black´s model with decreasing (current density-line length) products. This increase significantly changes the extrapolated lifetime at operating conditions.
Keywords :
copper; electromigration; extrapolation; integrated circuit interconnections; integrated circuit reliability; 250 degC; 300 degC; 350 degC; Black parameters; Black´s model; Blech effect; Cu; IC reliability; electromigration lifetime tests; interconnect electromigration threshold; lifetime extrapolations; low current density-length products; threshold product; Copper; Current density; Electrical resistance measurement; Electromigration; Extrapolation; Integrated circuit interconnections; Integrated circuit measurements; Integrated circuit reliability; Life testing; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International
Print_ISBN :
0-7803-8752-X
Type :
conf
DOI :
10.1109/IITC.2005.1499942
Filename :
1499942
Link To Document :
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