Title :
The multilayer analysis of molecular effect in BF2+ implanted silicon using ellipsometric spectra
Author :
Zhu, Wenyu ; Li, Xiaoqin ; Lin, Chenglu
Author_Institution :
Inst. of Metall., Acad. Sinica, Shanghai, China
Abstract :
The damage layer of ion implantation has been supposed to consist of 50 differential zones to investigate the molecular effect of BF2 + implanted silicon. The ellipsometric spectra (photon energy: 1.6-5.0 eV) were measured for samples implanted with 147 keV BF 2+ molecular ions at the dose range from 3×x1013 to 5×X1015 ion/cm2 and corresponding B+ and F+ atomic-ion implantation. The depth profiles of lattice damage as well as nonuniform damage of native oxide and components of interface can be calculated from the multilayer optical model. The spectroscopic ellipsometric data and effective medium approximation (EMB) can be calculated by means of the computer program described
Keywords :
boron compounds; doping profiles; elemental semiconductors; ellipsometry; ion beam effects; ion implantation; silicon; 1.6 to 5.0 eV; 147 keV; Si:BF2; damage layer; depth profiles; dose range; effective medium approximation; ellipsometric spectra; ion implantation; molecular effect; multilayer optical model; nonuniform damage; photon energy; Atom optics; Atomic measurements; Energy measurement; Ion implantation; Lattices; Nonhomogeneous media; Optical devices; Particle beam optics; Silicon; Spectroscopy;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503551
