Title :
Trade-offs between CMOS and BiCMOS
Author_Institution :
Semicond. Dev. Center, Hitachi Ltd.
Abstract :
This paper describes CMOS/BiCMOS trade-offs for deep sub-micron regime operating at less than 3 V. Advantages of CMOS compatible BiCMOS for high-frequency microprocessors and static random access memories are demonstrated
Keywords :
BiCMOS digital integrated circuits; VLSI; integrated circuit technology; technological forecasting; 3 V; CMOS/BiCMOS trade-offs; deep sub-micron regime; high-frequency microprocessors; static random access memories; BiCMOS integrated circuits; CMOS technology; Circuit optimization; Cutoff frequency; Electrodes; Inverters; MOS devices; Microprocessors; Power supplies; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503552
