Title :
Effect of CoWP cap thickness on via yield and reliability for Cu interconnects with CoWP-only cap process
Author :
Gambino, J. ; Wynne, J. ; Smith, S. ; Mongeon, S. ; Pokrinchak, P. ; Meatyard, D.
Author_Institution :
IBM Microeletronics, Essex Junction, VT, USA
Abstract :
Via resistance and stress migration lifetime were characterized for a CoWP-only cap process (i.e. no dielectric cap) and a CoWP+SiN cap process. For the CoWP-only process, the via resistance and stress migration lifetime depended on the CoWP thickness. In order to achieve a tightly distributed via resistance and long stress migration lifetime, the data suggests that the CoWP must be sufficiently thick to protect the Cu during the via etch and strip processes.
Keywords :
cobalt compounds; copper; electric resistance; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit yield; silicon compounds; tungsten compounds; CoWP; Cu; SiN; cobalt tungsten phosphide cap thickness; copper interconnects; microelectronics industry; silicon nitride cap; stress migration lifetime; via etch process; via reliability; via resistance; via strip process; via yield; Capacitance; Copper; Dielectrics; Electric resistance; Integrated circuit interconnections; Microelectronics; Scanning electron microscopy; Silicon compounds; Stress; Strips;
Conference_Titel :
Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International
Print_ISBN :
0-7803-8752-X
DOI :
10.1109/IITC.2005.1499944
