Cleaning technique of hot-wall batch type Ru CVD equipment by oxygen gas

Author

Choi, D. ; Nozu, D. ; Hasebe, K. ; Shibata, T. ; Nakao, K. ; Izuha, M. ; Akahori, H. ; Aoyama, T. ; Eguchi, K. ; Hieda, K. ; Arikado, T. ; Okumura, K.

Author_Institution

Process Eng. Dept., Tokyo Electron Tohoku Ltd., Nirasaki, Japan

fYear

2001

fDate

2001

Firstpage

301

Lastpage

304

Abstract

The gas cleaning of the hot-wall batch type Ru CVD reactor by oxygen was investigated. The cleaning mechanism is considered as follows. Below 800°C, Ru film is oxidized and forms RuO₂ which is not volatile. But above 800°C, RuO₂ film, which is formed at first, is oxidized again to form RuO₄. Since RuO ₄ is volatile, it evaporates easily. High temperature, low pressure and high oxygen flow rate were required to obtain fast Ru etching rate. With these optimum cleaning conditions by design of experiments (DOE), 30-nm-thick Ru film was removed completely in 20 minutes. We could accomplish this in situ oxygen gas cleaning effectively in short time by using hot-wall batch type Ru CVD equipment, which has high heating and cooling rate characteristics

Keywords

chemical vapour deposition; design of experiments; oxidation; ruthenium; surface cleaning; 800 C; O₂; Ru; Ru film; RuO₂; RuO₄; design of experiments; hot-wall batch-type Ru CVD reactor; oxidation; oxygen gas cleaning; Cleaning; Cooling; Electrodes; Etching; Heating; Inductors; Oxygen; Scanning electron microscopy; Temperature; US Department of Energy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Symposium, 2001 IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-6731-6

Type

conf

DOI

10.1109/ISSM.2001.962972

Filename

962972