DocumentCode
1839747
Title
Emitter polysilicon process optimization by RGA and process proposal for interfacial oxide growth using ozonated water
Author
Willis, Carl ; Foglietti, Pietro ; Artinger, Josef
Author_Institution
Texas Instruments GmbH, Freising, Germany
fYear
2001
fDate
2001
Firstpage
305
Lastpage
308
Abstract
A residual gas analyzer (RGA) has been employed to analyse trace gases in a LPCVD polysilicon reactor used for emitter polysilicon process. Process steps leading up to this oxidation have been characterized in terms of water and oxygen partial pressure. An alternative process of an ozonated water rinse in the preceding wet clean is proposed in order to grow a stable and reliable ultra-thin layer of chemical oxide
Keywords
CVD coatings; chemical analysis; elemental semiconductors; oxidation; silicon; surface cleaning; LPCVD reactor; Si; emitter polysilicon process optimization; interfacial oxide growth; oxidation; ozonated water rinse; residual gas analyzer; trace gas analysis; wet cleaning; Boats; Furnaces; Inductors; Instruments; Mass spectroscopy; Oxidation; Performance gain; Proposals; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-6731-6
Type
conf
DOI
10.1109/ISSM.2001.962973
Filename
962973
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