Title :
Hot carrier and soft breakdown effects on VCO perfomance
Author :
Enjun Xiao ; Yuan, J.S.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
Abstract :
This paper systematically investigates the hot carrier and soft-breakdown induced performance degradation in a CMOS voltage-controlled oscillator used in phase locked loop frequency synthesizers. After deriving the closed-form equations to predict phase noise and VCO gain, we relate VCO RF performance such as phase noise, tuning range and gain of VCO subject to electrical stress. The circuit degradations predicted by analytical model equations are verified by SpectraRF simulation using parameters extracted from the experimental data of 0.16 /spl mu/m CMOS technology.
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; UHF oscillators; circuit simulation; hot carriers; integrated circuit modelling; integrated circuit noise; phase noise; thermal noise; timing jitter; voltage-controlled oscillators; CMOS VCO; PLL frequency synthesizers; RF performance degradation; SpectraRF simulation; VCO gain; closed-form equations; electrical stress; hot carrier effects; mobility degradation; phase noise; ring oscillator; soft breakdown effects; tuning range; Analytical models; CMOS technology; Degradation; Electric breakdown; Equations; Hot carriers; Performance gain; Phase locked loops; Phase noise; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7246-8
DOI :
10.1109/RFIC.2002.1012091
