A research on power complementary bipolar technology to prevent parasitic operation

Author

Kim, J.H. ; Kim, C.J. ; Kang, H.S. ; Jang, Y.S. ; Lim, S.K.

Author_Institution

Semicond. Res. & Dev. Center, Samsung Electr. Co. Ltd., Kyunggi-Do, South Korea

fYear

1995

fDate

24-28 Oct 1995

Firstpage

778

Lastpage

780

Abstract

A 2 μm design ruled, High-Densified, and Low-Power-Consuming Bipolar Integrated Circuit process has been developed. The breakdown voltage of the transistor is 15 V and it has a stable current driving capability at high current (about 1 A) due to the low saturation voltage between emitter and collector. NPN Tr. has been fabricated to prevent leakage current and has good Cut-Off frequency (fT=5 GHz) by using a polysilicon emitter. The characteristics of this process is a Double Epi Process to form a high concentrated N+BL in VPNP Tr. (that is the same as in NPN Tr.) which can protect the parasitic Tr. operation like Latch-Up Phenomenon (Ihold=26 mA, Pa-PNP Tr, hFE=4). And it also includes the IIL Device without an additional mask layer. This process is a low voltage, high current power complementary bipolar process that merges a variety of NPN, VPNP, LPNP, SPNP, IIL devices, and a diffusion resistor

Keywords

bipolar integrated circuits; integrated circuit technology; power integrated circuits; 1 A; 15 V; 2 micron; 5 GHz; IIL device; LPNP transistor; NPN transistor; SPNP transistor; VPNP transistor; breakdown voltage; current driving; cut-off frequency; diffusion resistor; double epi process; high density low voltage high current bipolar integrated circuit; latch-up phenomenon; leakage current; parasitic operation; polysilicon emitter; power complementary bipolar technology; saturation voltage; Bipolar integrated circuits; Boron; Breakdown voltage; Cutoff frequency; Epitaxial growth; Fabrication; Leakage current; Low voltage; Protection; Research and development;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.503557

Filename

503557