Title :
Methods of stabilizing linewidths in photolithography for improving ASIC plant productivity
Author :
Hasegawa, Mitsuhiko ; Mafune, Yoshiyuki ; Katoh, Ikuo
Author_Institution :
Fujitsu Ltd., Fukushima, Japan
Abstract :
The two methods described are useful for stabilizing linewidths in photolithography without making any changes in existing processes and equipment. The methods can also be applied to the stabilization of line widths in 130-nm scale devices, which is currently an urgent need. 1) Controlling the thickness of LOCOS-SiN film can stabilize device isolation width. Also, adjusting the thickness of the resist film can standardize SiN film thickness conditions and thereby reduce deviations in linewidth that are caused by imprecise film thickness. 2) Optimizing the film thickness standard for gate oxidation film processing with a sufficient process capability can increase the range of allowable gate lengths, thereby improving process capability
Keywords :
CMOS integrated circuits; application specific integrated circuits; integrated circuit yield; isolation technology; oxidation; photolithography; 130 nm; ASIC plant productivity; LOCOS-SiN film; allowable gate lengths; device isolation width; film thickness conditions; gate oxidation; imprecise film thickness; linewidth stability; photolithography; process capability; Application specific integrated circuits; CMOS process; Etching; Lithography; Oxidation; Productivity; Resists; Semiconductor films; Silicon compounds; Thickness control;
Conference_Titel :
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-6731-6
DOI :
10.1109/ISSM.2001.962974
