DocumentCode
1839794
Title
Characterization of flip chip microjoins up to 40 GHz using silicon carrier
Author
Patel, Chirag S. ; Andry, Paul S. ; Jenkins, Keith A. ; Dang, Bing ; Horton, Raymond ; Polastre, Robert J. ; Tsang, Comelia K.
Author_Institution
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2005
fDate
6-8 June 2005
Firstpage
129
Lastpage
131
Abstract
Electrical characterization results of fine pitch flip chip interconnections, called microjoins, using a silicon carrier are reported. Microjoins with 50 μm diameter, 100 μm pitch are assembled onto a silicon carrier and characterized up to 40 GHz using transmission line test macros. Time and frequency domain measurements of a single 50 μm diameter microjoin give 6 ps delay and less than -0.5 dB transmission losses up to 40 GHz.
Keywords
flip-chip devices; integrated circuit interconnections; silicon; 0 to 40 GHz; 100 micron; 50 micron; 6 ps; Si; electrical characterization; fine pitch flip chip interconnections; flip chip microjoins; frequency domain measurements; silicon carrier; time domain measurements; transmission line test macros; Assembly; Flip chip; Frequency domain analysis; Frequency measurement; Loss measurement; Semiconductor device measurement; Silicon; Testing; Time measurement; Transmission line measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International
Print_ISBN
0-7803-8752-X
Type
conf
DOI
10.1109/IITC.2005.1499952
Filename
1499952
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