Title :
Cryogenic behaviors of polysilicon emitter bipolar transistors and ECL circuits
Author :
Li, Yao ; Wei, Tongli ; Jiang Zheng ; Shen, Keqiang ; Gao, Meifang
Author_Institution :
Microelectron. Center, Southeast Univ., Nanjing, China
Abstract :
Some important parameters of polysilicon emitter bipolar transistors and the main characteristics of an ECL gate are studied experimentally and theoretically at low temperature. Based on them, optimization of a low temperature ECL circuit can be realized
Keywords :
bipolar logic circuits; bipolar transistors; circuit optimisation; cryogenic electronics; emitter-coupled logic; silicon; Si; cryogenic characteristics; low temperature ECL circuit; optimization; polysilicon emitter bipolar transistor; Bipolar transistor circuits; Bipolar transistors; Circuit noise; Conductivity; Cryogenics; Equations; Microelectronics; Photonic band gap; Temperature dependence; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503558
