DocumentCode :
1839807
Title :
Low temperature bipolar transistor operated in a hybrid-mode compatible with CMOS technology
Author :
Li, Shurong ; Zheng, Yunguang ; Guo, Weilian ; Jiang, Liang ; Liang, Huilai ; Wang, Yiming ; Liu, Litian ; Zhijian Li
Author_Institution :
Dept. of Electron. Eng., Tianjin Univ., China
fYear :
1995
fDate :
24-28 Oct 1995
Firstpage :
784
Lastpage :
786
Abstract :
In this paper, a resistance RGB has been introduced between Gate and Base of a bipolar/MOSFET hybrid-mode Lateral low temperature bipolar transistor. By controlling the Voltage VGB that results from base current flowing on RGB, and using the property of hFE and Ic varying with VGB sensitively, the current driving capability, the hFE uniformity, and then the performance of the device can be improved significantly
Keywords :
MOSFET; bipolar transistors; cryogenic electronics; CMOS technology; bipolar/MOSFET hybrid-mode lateral low temperature bipolar transistor; current driving; current gain uniformity; resistance; Bipolar transistors; Bismuth; CMOS technology; Doping; Electrons; MOSFET circuits; Microelectronics; Temperature sensors; Transconductance; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
Type :
conf
DOI :
10.1109/ICSICT.1995.503559
Filename :
503559
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1839807
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