• DocumentCode
    1839810
  • Title

    Polymer control in aluminum etch chambers to achieve >450 hours MTBC

  • Author

    Grenci, Charles ; Sauers, Victor ; King, Robert ; Dodge, Daniel ; Schlecht, Martin ; Gray, Kevin ; Foley, Rick

  • Author_Institution
    Galiso Inc., Montrose, CO, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    313
  • Lastpage
    316
  • Abstract
    Particle control is an important objective in Al etch systems. Unquestionably, polymer buildup must be kept under control. Defects, which result from chamber flaking, typically bridge metal lines together, resulting in lower yield. Excessive polymer buildup requires a chamber wetclean, consuming manpower and equipment uptime. Currently, most metal etch process chambers in the world require a wet clean at 90 - 150 hours. This article presents measures to control polymer buildup, and a qualification procedure to ensure the cleanliness of the chamber prior to running product. It will also show how Cypress Semiconductor has improved its metal etch mean time between cleans to 350 - 450 RF hours while improving yield
  • Keywords
    etching; integrated circuit interconnections; integrated circuit yield; production control; surface cleaning; 350 to 450 hr; Al; Cypress Semiconductor; MTBC; chamber flaking; chamber wetclean; etch chambers; mean time between clean; metal etch process; particle control; polymer control; qualification procedure; yield; Aluminum; Artificial intelligence; Plasma applications; Polymers; Radio frequency; Temperature measurement; Thermal stresses; Tin; Wet etching; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing Symposium, 2001 IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-6731-6
  • Type

    conf

  • DOI
    10.1109/ISSM.2001.962975
  • Filename
    962975