DocumentCode
1839833
Title
BMHMT: device & model
Author
Chen, Ping ; Li, Zhijian ; Liu, Litian
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear
1995
fDate
24-28 Oct 1995
Firstpage
787
Lastpage
789
Abstract
A kind of Bi-MOS Hybrid-Mode transistor (BMHMT) and its analytical model are proposed. Both experiment and simulation confirm our conclusions
Keywords
MOSFET; bipolar transistors; semiconductor device models; BMHMT; Bi-MOS Hybrid-Mode transistor; analytical model; Analytical models; BiCMOS integrated circuits; CMOS technology; Charge carrier processes; Hybrid junctions; MOSFET circuits; Microelectronics; Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.503560
Filename
503560
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