Integration and reliability of a noble TiZr/TiZrN alloy barrier for Cu/low-k interconnects

Author

Suh, Bong-Seok ; Choi, Seung-Man ; Wee, Youngjin ; Lee, Jug-Eun ; Lee, Junho ; Lee, Sun-Jung ; Lee, Soo-Geun ; Shin, Hongjae ; Lee, Nae-In ; Kang, Ho-Kyu ; Suh, Kwangpyuk

Author_Institution

Adv. Process Dev. Team, Samsung Electron. Co. Ltd., Gyeonggi-Do, South Korea

fYear

2005

fDate

6-8 June 2005

Firstpage

138

Lastpage

140

Abstract

We have investigated TiZr alloy as a new Cu barrier material for low cost and high performance Cu/low-k interconnects. TiZrN ternary nitride was used as a Cu diffusion barrier and TiZr as an adhesion promotion layer. The issue of metal line resistance shift was suppressed using a novel 2-step annealing procedure. Multi-level Cu metal wiring integration was successfully carried out and the enhanced electrical performance of low via resistance with high via yield was obtained. Improved electromigration and stress-induced voiding resistances also have been demonstrated.

Keywords

copper; electric resistance; electromigration; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit yield; titanium alloys; titanium compounds; zirconium alloys; zirconium compounds; Cu; TiZr; TiZrN; adhesion promotion layer; annealing procedure; copper/low-k interconnects; diffusion barrier; electromigration; metal line resistance; metal wiring integration; stress-induced voiding resistance; titanium zirconium alloy; titanium zirconium nitride; via resistance; via yield; Adhesives; Annealing; Copper alloys; Costs; Dielectrics; Sheet materials; Sputtering; Stress; Testing; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International

Print_ISBN

0-7803-8752-X

Type

conf

DOI

10.1109/IITC.2005.1499955

Filename

1499955