Title :
Evaluation of adhesion and barrier properties for CVD-TaN on dual damascene copper interconnects
Author :
Hong, Jong Won ; Lee, Jong Myeong ; Choi, Kyung In ; Chung, Youngsu ; Lee, Sang Woo ; Choi, Gif Heyun ; Kim, Sung Tae ; Chung, U-in ; Moon, Joo Tae ; Ryu, Byung-Il
Author_Institution :
Process Dev. Team, Samsung Electron. Co. Ltd., Kyungki-Do, South Korea
Abstract :
CVD-TaN thin films derived from a new noble precursor, tert-amylimidotrisdim-ethylamidotantalum (TAIMATA), for the diffusion barrier in Cu interconnects were studied. The effects of CVD-TaN on dual damascene interconnect (DDI) for Cu metallization were investigated on SiOC (k=2.9) dielectrics with 4 K via chains. The via resistances were measured as a function of TaN thickness (10∼45 Å), compared to PVD TaN. Diffusion barrier properties (bias temperature stress) and delamination length (adhesion test) were studied as a function of TaN thickness. Ar and H2 post-plasma after CVD-TaN was introduced to improve the properties of the barrier materials. After applying post-plasma, the via resistances and delamination length of CVD-TaN were investigated and compared to those without post-plasma.
Keywords :
adhesion; argon; copper; delamination; diffusion barriers; hydrogen; integrated circuit interconnections; integrated circuit metallisation; plasma CVD coatings; silicon compounds; surface treatment; tantalum compounds; 10 to 45 Å; Ar; CVD thin films; Cu-TaN-SiOC; H2; TAIMATA; adhesion testing; bias temperature stress; delamination length; dielectrics; diffusion barrier; dual damascene interconnects; metallization; post-plasma treatment; tert-amylimidotrisdim-ethylamidotantalum; via resistance; Adhesives; Atherosclerosis; Copper; Delamination; Dielectric measurements; Dielectric thin films; Electrical resistance measurement; Metallization; Temperature; Thickness measurement;
Conference_Titel :
Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International
Print_ISBN :
0-7803-8752-X
DOI :
10.1109/IITC.2005.1499956
