DocumentCode
1839906
Title
Development and verification of a new non-linear MOSFET model
Author
Romdane, H. ; Bergeault, E. ; Huyart, B.
Author_Institution
Ecole Nat. Superieure des Telecommun., Paris, France
fYear
2002
fDate
3-4 June 2002
Firstpage
487
Lastpage
489
Abstract
A new non-linear model of Si MOSFET transistor based on a device characterization using DC and small-signal scattering parameter measurements is proposed. It is shown that interpolation of measured data and look up tables provide an extensive description of the extrinsic and intrinsic MOSFET non-linearities. Model verification is achieved by comparing simulations and on-wafer measurements of S parameters at a typical bias point.
Keywords
MOSFET; S-parameters; microwave field effect transistors; semiconductor device models; table lookup; DC measurements; MOSFET; bias point; extrinsic nonlinearities; interpolation; intrinsic nonlinearities; look up tables; microwave integrated circuits; model verification; nonlinear model; on-wafer measurements; small-signal scattering parameter measurements; Electrical resistance measurement; Equivalent circuits; Integrated circuit modeling; MOSFET circuits; Nonlinear equations; Radio frequency; Roentgenium; Scattering parameters; Semiconductor device modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location
Seattle, WA, USA
ISSN
1529-2517
Print_ISBN
0-7803-7246-8
Type
conf
DOI
10.1109/RFIC.2002.1012098
Filename
1012098
Link To Document