Novel selective sidewall airgap process [single damascene interconnects]

Author

De Mussy, J. P Gueneau ; Bruynsereade, C. ; Tökei, Zs ; Beyer, G.P. ; Maex, K.

Author_Institution

IMEC, Leuven, Belgium

fYear

2005

fDate

6-8 June 2005

Firstpage

150

Lastpage

152

Abstract

In the present work, we demonstrate a novel selective process for airgap formation at the interconnect sidewalls for single damascene interconnects. The proposed single step scheme is simpler than the currently existing airgap approaches. This process has been shown to be scalable down to spacings of 60 nm and allows capacitance drops in the range of 6%-39% with only a marginal increase in leakage current.

Keywords

dielectric materials; integrated circuit interconnections; leakage currents; 60 nm; Si₃N₄-SiO₂-SiC-SiOC:H; capacitance reduction; chemical selectivity; interconnect sidewall airgap formation; intra-metal dielectrics; leakage current; scalable process; selective sidewall airgap process; single damascene interconnects; wide process window; Atherosclerosis; Capacitance; Chemicals; Copper; Dielectric materials; Hafnium; Permittivity; Plasma applications; Resists; Strips;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International

Print_ISBN

0-7803-8752-X

Type

conf

DOI

10.1109/IITC.2005.1499959

Filename

1499959

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1839953