Title :
Novel selective sidewall airgap process [single damascene interconnects]
Author :
De Mussy, J. P Gueneau ; Bruynsereade, C. ; Tökei, Zs ; Beyer, G.P. ; Maex, K.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
In the present work, we demonstrate a novel selective process for airgap formation at the interconnect sidewalls for single damascene interconnects. The proposed single step scheme is simpler than the currently existing airgap approaches. This process has been shown to be scalable down to spacings of 60 nm and allows capacitance drops in the range of 6%-39% with only a marginal increase in leakage current.
Keywords :
dielectric materials; integrated circuit interconnections; leakage currents; 60 nm; Si3N4-SiO2-SiC-SiOC:H; capacitance reduction; chemical selectivity; interconnect sidewall airgap formation; intra-metal dielectrics; leakage current; scalable process; selective sidewall airgap process; single damascene interconnects; wide process window; Atherosclerosis; Capacitance; Chemicals; Copper; Dielectric materials; Hafnium; Permittivity; Plasma applications; Resists; Strips;
Conference_Titel :
Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International
Print_ISBN :
0-7803-8752-X
DOI :
10.1109/IITC.2005.1499959
