Vertically aligned carbon nanofiber arrays for on-chip interconnect applications

Author

Ngo, Quoc ; Cassel, Alan M. ; Li, Jun ; Krishnan, Shoba ; Meyyappan, M. ; Yang, Cary Y.

Author_Institution

Center for Nanostructures, Santa Clara Univ., CA, USA

fYear

2005

fDate

6-8 June 2005

Firstpage

153

Lastpage

155

Abstract

Recent advances in the growth of carbon nanofibers (CNF) using plasma-enhanced chemical vapor deposition (PECVD) allows for the potential use of these novel structures in backend-of-line (BEOL) interconnect applications. Reliability data is presented for vertically aligned CNF array structures as well as temperature-dependent electrical conductance measurements of both CNF arrays and CNF heterojunction structures. CNF arrays are presented as a possible new via material, while CNF heterojunctions present a promising new architecture for diode array and memory applications.

Keywords

carbon fibres; integrated circuit interconnections; integrated circuit reliability; nanoelectronics; nanostructured materials; plasma CVD; semiconductor diodes; BEOL; C; CNF array structure reliability; CNF heterojunction structures; CNF via material; PECVD; back-end-of-line interconnects; carbon nanofiber arrays; diode arrays; memory circuits; on-chip interconnects; plasma-enhanced chemical vapor deposition; temperature-dependent electrical conductance; vertically aligned nanofiber arrays; Chemical vapor deposition; Conducting materials; Diodes; Electric variables measurement; Heterojunctions; Plasma applications; Plasma chemistry; Plasma measurements; Plasma temperature; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International

Print_ISBN

0-7803-8752-X

Type

conf

DOI

10.1109/IITC.2005.1499960

Filename

1499960