Smoothing gate capacitance models for CMOS radio frequency and microwave integrated circuits CAD

Author

Dobes, J.

Author_Institution

Czech Tech. Univ., Praha, Czech Republic

fYear

2002

fDate

3-4 June 2002

Firstpage

495

Lastpage

498

Abstract

Convergence problems for both voltage- and charge-controlled models of MOSFET gate capacitances are often a limiting factor of CAD tools. In paper, an idea of exponential smoothing of model discontinuities is proposed. The method is demonstrated by smoothing the discontinuity of Meyer´s model at zero drain-source voltage. The updated model is tested on flip-flop circuit by an advanced algorithm.

Keywords

CMOS integrated circuits; SPICE; capacitance; circuit CAD; field effect MMIC; flip-flops; integrated circuit design; integrated circuit modelling; microwave integrated circuits; smoothing methods; CMOS RFIC CAD; CMOS microwave IC CAD; MOSFET gate capacitances; Meyer model; SPICE3 program; charge-controlled models; circuit interactive analyzer program; convergence problems; discontinuity smoothing; exponential smoothing; flip-flop circuit; gate capacitance models smoothing; model discontinuities; voltage-controlled models; zero drain-source voltage; CMOS integrated circuits; Capacitance; Convergence; Integrated circuit modeling; Microwave integrated circuits; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Smoothing methods; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE

Conference_Location

Seattle, WA, USA

ISSN

1529-2517

Print_ISBN

0-7803-7246-8

Type

conf

DOI

10.1109/RFIC.2002.1012100

Filename

1012100