MM-wave characteristics of SiC-based IMPATT oscillators

Wide band gap semiconductor SiC with their superior electrical properties are likely candidates to replace conventional low band gap materials like Si and GaAs in the near future for RF power applications. The authors have therefore studied this prospects through advanced computer simulation experiment on hexagonal (both 4 H and 6 H) SiC based double drift region IMPATT diodes. The study indicates that around 300 GHz, 4 H-SiC based Impatt devices is capable of generating high microwave power with efficiency as compared to 6 H-SiC based IMPATT diodes for the same frequency of operation.