DocumentCode
1840368
Title
Integrated inductors in the chip-to-board interconnect layer fabricated using solderless electroplating bonding
Author
Yeun-Ho Joung ; Nuttinck, S. ; Sang-Woong Yoon ; Allen, M.G. ; Laskar, J.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume
3
fYear
2002
fDate
2-7 June 2002
Firstpage
1409
Abstract
Integrated inductors are typically formed either on-chip or embedded in the chip package or board. In this work, we explore the possibility of forming inductors in the chip-to-board interconnect layer. The solderless technique of electroplating bonding is used to simultaneously form inductor structures as well as chip-to-board interconnect The use of the gap between the chip and substrate for inductors not only increases integration density, but also allows large magnetic cross-sectional areas to be achieved. To demonstrate the technology, 3- and 7-turn inductors 500 /spl mu/m in height were fabricated. These inductors showed inductance values of 3.45 nH and 10.5 nH, respectively. The measured Q-factors of the 3- and 7-turn inductors were 70 and 55 respectively, which agreed very well with modeling results.
Keywords
Q-factor; UHF circuits; chip-on-board packaging; electroplating; equivalent circuits; inductors; interconnections; micromachining; printed circuit manufacture; Cu; Cu interconnection; Q-factors; RF systems; chip-to-board interconnect layer; epoxy-glass composite PWB; glass substrate; high quality factor; integrated inductors; packaging; printed wiring board; solderless electroplating bonding; surface micromachining technology; Bonding; Fabrication; Glass; Inductance; Inductors; Integrated circuit interconnections; Packaging; Spirals; Substrates; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location
Seattle, WA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7239-5
Type
conf
DOI
10.1109/MWSYM.2002.1012119
Filename
1012119
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