DocumentCode :
1840376
Title :
Study and Development of On-Wafer Cryogenic Calibration Techniques
Author :
Nishimoto, M. ; Hamai, M. ; Laskar, J.
Author_Institution :
Electrical Engineering Department, University of Hawaii, 2540 Dole Street, Honolulu, Hawaii 96822
Volume :
26
fYear :
1994
fDate :
Dec. 1994
Firstpage :
63
Lastpage :
67
Abstract :
In recent years significant progress has been made in the development of cryogenic, on-wafer probing systems [reference 1-6]. The major shortcoming of previous efforts has been the lack of a repeatable and accurate system yielding results comparable to room temperature systems. A quantitative study must be performed to determine measurement accuracy and repeatability. Most importantly, without such verification and knowledge, researchers have failed to develop effective on-wafer S-parameter and noise parameter calibration techniques. We implement a two-tier calibration algorithm [reference 7] for cryogenic on-wafer calibrations. We demonstrate, for the first time, that cryogenic on-wafer calibrations are quantitatively comparable with room temperature calibration results.
Keywords :
Calibration; Cryogenics; Frequency; Measurement standards; NIST; Performance evaluation; Satellites; Scattering parameters; Semiconductor device noise; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ARFTG Conference Digest-Fall, 44th
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-7803-5686-1
Type :
conf
DOI :
10.1109/ARFTG.1994.327082
Filename :
4119757
Link To Document :
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