Title :
A 2.4-GHz/5-GHz CMOS low noise amplifier with high-resistivity ELTRAN(R) SOI-Epi/sup TM/ wafers
Author :
Kodate, J. ; Ugajin, M. ; Tsukahara, T. ; Douseki, T. ; Sato, N. ; Okabe, T. ; Ohmi, K. ; Yonehara, T.
Author_Institution :
NTT Telecommun. Energy Labs., Kanagawa, Japan
Abstract :
The performance of radio frequency integrated circuits (RFICs) in silicon-on-insulator (SOI) technology can be improved by using a high-resistivity SOI substrate. We investigated the correlation between substrate resistivity and the performance of a low noise amplifier (LNA) on ELTRAN SOI-Epi wafers, whose resistivity can be controlled precisely. The use of high-resistivity ELTRAN wafers improves the Q-factor of spiral inductors, and increases the gain and narrows the bandwidth of the LNA.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; Q-factor; UHF amplifiers; UHF integrated circuits; field effect MMIC; inductors; integrated circuit noise; silicon-on-insulator; 2.4 GHz; 5 GHz; CMOS low noise amplifier; LNA; Q-factor; SOI technology; bandwidth narrowing; gain increase; high-resistivity ELTRAN SOI-Epi wafers; high-resistivity SOI substrate; precise resistivity control; radio frequency integrated circuits; spiral inductors; substrate resistivity; CMOS technology; Conductivity; Integrated circuit noise; Integrated circuit technology; Low-noise amplifiers; Q factor; Radiofrequency amplifiers; Radiofrequency integrated circuits; Silicon on insulator technology; Spirals;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1012121
