A modified cascode type low noise amplifier using dual common source transistors

Author

Sungmin Ock ; Kichon Han ; Jong-Ryul Lee ; Bumman Kim

Author_Institution

Future Commun. IC, Sungnam, South Korea

Volume

3

fYear

2002

fDate

2-7 June 2002

Firstpage

1423

Abstract

A Low Noise Amplifier (LNA) based on a GaAs MESFET has been implemented with a modified cascode configuration using two common source transistors to achieve high gain and linearity, low noise figure and low power consumption. The circuit design concept is introduced and implemented. The measured performance of the LNA at 900 MHz includes a gain of 17 dB, noise figure of 1.6 dB, and IIP3 of 8.5 dBm using a supply of 4.7 mA and 2.7 V.

Keywords

III-V semiconductors; MESFET integrated circuits; UHF amplifiers; UHF integrated circuits; field effect analogue integrated circuits; gallium arsenide; integrated circuit design; integrated circuit noise; low-power electronics; 1.6 dB; 17 dB; 2.7 V; 4.7 mA; 900 MHz; GaAs; GaAs MESFET LNA; IIP3; circuit design concept; dual common source transistors; high gain; high linearity; low noise figure; low power consumption; modified cascode configuration; Circuit noise; Circuit synthesis; Energy consumption; Gain measurement; Gallium arsenide; High power amplifiers; Linearity; Low-noise amplifiers; MESFETs; Noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1012122

Filename

1012122