Title :
A modified cascode type low noise amplifier using dual common source transistors
Author :
Sungmin Ock ; Kichon Han ; Jong-Ryul Lee ; Bumman Kim
Author_Institution :
Future Commun. IC, Sungnam, South Korea
Abstract :
A Low Noise Amplifier (LNA) based on a GaAs MESFET has been implemented with a modified cascode configuration using two common source transistors to achieve high gain and linearity, low noise figure and low power consumption. The circuit design concept is introduced and implemented. The measured performance of the LNA at 900 MHz includes a gain of 17 dB, noise figure of 1.6 dB, and IIP3 of 8.5 dBm using a supply of 4.7 mA and 2.7 V.
Keywords :
III-V semiconductors; MESFET integrated circuits; UHF amplifiers; UHF integrated circuits; field effect analogue integrated circuits; gallium arsenide; integrated circuit design; integrated circuit noise; low-power electronics; 1.6 dB; 17 dB; 2.7 V; 4.7 mA; 900 MHz; GaAs; GaAs MESFET LNA; IIP3; circuit design concept; dual common source transistors; high gain; high linearity; low noise figure; low power consumption; modified cascode configuration; Circuit noise; Circuit synthesis; Energy consumption; Gain measurement; Gallium arsenide; High power amplifiers; Linearity; Low-noise amplifiers; MESFETs; Noise figure;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1012122
