• DocumentCode
    1840486
  • Title

    Chasing a latent CDM ESD failure by unconventional FA methodology

  • Author

    Dhakad, Harshit ; Gossner, Harald ; Zekert, Stefan ; Stein, Bernhard ; Russ, Christian

  • Author_Institution
    Intel Mobile Commun., Munich, Germany
  • fYear
    2012
  • fDate
    9-14 Sept. 2012
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    A hard-to-detect functional CDM ESD failure caused by an obscure charge trapping phenomenon on an advanced CMOS IC is described while no physical damage was evident. Advancing failure analysis method by localized thermal LASER annealing and applying analytical ESD test plan led to successful localization of the root cause.
  • Keywords
    CMOS integrated circuits; electrostatic discharge; failure analysis; integrated circuit modelling; integrated circuit reliability; laser beam annealing; rapid thermal annealing; advanced CMOS IC; analytical ESD test plan; charge device model; charge trapping phenomenon; failure analysis method; hard-to-detect functional CDM ESD failure; latent CDM ESD failure chasing; root cause localization; thermal laser annealing; unconventional FA methodology; Annealing; Electrostatic discharges; Fuses; Integrated circuits; Lasers; Stress; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2012 34th
  • Conference_Location
    Tucson, AZ
  • ISSN
    0739-5159
  • Print_ISBN
    978-1-4673-1467-1
  • Type

    conf

  • Filename
    6333297
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1840486