Title :
Chasing a latent CDM ESD failure by unconventional FA methodology
Author :
Dhakad, Harshit ; Gossner, Harald ; Zekert, Stefan ; Stein, Bernhard ; Russ, Christian
Author_Institution :
Intel Mobile Commun., Munich, Germany
Abstract :
A hard-to-detect functional CDM ESD failure caused by an obscure charge trapping phenomenon on an advanced CMOS IC is described while no physical damage was evident. Advancing failure analysis method by localized thermal LASER annealing and applying analytical ESD test plan led to successful localization of the root cause.
Keywords :
CMOS integrated circuits; electrostatic discharge; failure analysis; integrated circuit modelling; integrated circuit reliability; laser beam annealing; rapid thermal annealing; advanced CMOS IC; analytical ESD test plan; charge device model; charge trapping phenomenon; failure analysis method; hard-to-detect functional CDM ESD failure; latent CDM ESD failure chasing; root cause localization; thermal laser annealing; unconventional FA methodology; Annealing; Electrostatic discharges; Fuses; Integrated circuits; Lasers; Stress; Transistors;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2012 34th
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-4673-1467-1
