Novel electro-chemical mechanical planarization using carbon polishing pad to achieve robust ultra low-k/Cu integration

Author

Kondo, S. ; Tominaga, S. ; Namiki, A. ; Yamada, K. ; Abe, D. ; Fukaya, K. ; Shimada, M. ; Kobayashi, N.

Author_Institution

Semicond. Leading Edge Technol., Inc., Ibaraki, Japan

fYear

2005

fDate

6-8 June 2005

Firstpage

203

Lastpage

205

Abstract

We developed a novel electro-chemical mechanical planarization (e-CMP) method that uses a conductive carbon pad for polishing 300-mm wafers. More than one hundred electro-cells were fabricated into the carbon pad, and the method resolved issues with conventional e-CMP, such as scratching caused by metal electrodes, copper residues, and process complexity of cathode regeneration. By using an e-CMP process followed by TaN-CMP, porous low-k/Cu interconnects were successfully fabricated.

Keywords

carbon; chemical mechanical polishing; copper; electrolytic polishing; integrated circuit interconnections; integrated circuit metallisation; planarisation; 300 mm; C; CMP; Cu; carbon polishing pad; cathode regeneration; copper residues; electro-chemical mechanical planarization; metal electrodes; scratching; ultra low-k/copper integration; Anodes; Atherosclerosis; Cathodes; Chemicals; Copper; Electrodes; Insulation; Planarization; Robustness; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International

Print_ISBN

0-7803-8752-X

Type

conf

DOI

10.1109/IITC.2005.1499982

Filename

1499982