DocumentCode :
1840687
Title :
Effect of porosity on reducing cohesive strength and accelerating crack growth in ultra low-k thin-films [IC interconnect applications]
Author :
Guyer, Eric P. ; Dauskardt, Reinhold H.
Author_Institution :
Dept. of Mater. Sci. & Eng., Stanford Univ., CA, USA
fYear :
2005
fDate :
6-8 June 2005
Firstpage :
223
Lastpage :
225
Abstract :
The reliable fabrication of interconnects containing nanoporous low dielectric constant (LKD) films has proven to be a significant technological challenge. The LKDs are brittle in nature and susceptible to stress corrosion cracking in reactive aqueous environments. Moreover, nearly all levels of processing involve subjecting these extremely fragile materials to mechanical loads in the presence of harsh aqueous solutions, such as chemical mechanical planarization (CMP). Here we demonstrate how controlled volume fractions of nanometer scale porosity reduces the cohesive strength of LKDs and significantly accelerates the rate of crack growth in both simulated and commercial CMP solutions.
Keywords :
brittleness; chemical mechanical polishing; dielectric thin films; integrated circuit interconnections; mechanical strength; nanoporous materials; planarisation; porosity; stress corrosion cracking; CMP; brittle LKD films; chemical mechanical planarization; cohesive strength; crack growth acceleration; crack growth rate; harsh aqueous solutions; interconnects; low dielectric constant films; nanometer scale porosity; nanoporous films; stress corrosion cracking; ultra low-k thin-films; Acceleration; Application specific integrated circuits; Chemical technology; Corrosion; Dielectric constant; Dielectric materials; Fabrication; Nanoporous materials; Stress; Thin films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International
Print_ISBN :
0-7803-8752-X
Type :
conf
DOI :
10.1109/IITC.2005.1499990
Filename :
1499990
Link To Document :
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