Title :
A new X-band 180/spl deg/ high performance phase shifter using (Ba, Sr)TiO/sub 3/ thin films
Author :
Acikel, B. ; Taylor, T.R. ; Hansen, P.J. ; Speck, J.S. ; York, R.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
In this paper, a new device topology has been proposed to implement parallel plate capacitors using BaSrTiO/sub 3/ (BST) thin films for microwave applications. The new device design simplifies the monolithic process and overcomes the problems associated with electrode patterning. An X-band 180/spl deg/ phase shifter has been implemented using new device layout. The circuit provided 240/spl deg/-phase shift with an insertion loss of only 3 dB at 10 GHz and room temperature. We have shown a figure of merit 93/spl deg//dB at 6.3 GHz and 87/spl deg//dB at 8.5 GHz. To our knowledge, these are the state of the art results for distributed phase shifters implemented using parallel plate or interdigital capacitors at room temperature.
Keywords :
MMIC phase shifters; barium compounds; ferroelectric capacitors; ferroelectric thin films; losses; strontium compounds; 6.3 to 10 GHz; BST thin films; BaSrTiO/sub 3/; BaSrTiO/sub 3/ thin films; X-band phase shifter; device layout; electrode patterning; ferroelectric thin films; insertion loss; microwave applications; monolithic process; parallel plate capacitors; Binary search trees; Capacitors; Electrodes; Insertion loss; Microwave devices; Phase shifters; Temperature; Thin film circuits; Thin film devices; Topology;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1012132
