Low-resistance multi-walled carbon nanotube vias with parallel channel conduction of inner shells [IC interconnect applications]

Author

Nihei, Mizuhisa ; Kondo, Daiyu ; Kawabata, Akio ; Sato, Shintaro ; Shioya, Hiroki ; Sakaue, Mamoru ; Iwai, Taisuke ; Ohfuti, Mari ; Awano, Yuji

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

2005

fDate

6-8 June 2005

Firstpage

234

Lastpage

236

Abstract

We have succeeded in lowering the resistance of multi-walled carbon nanotube (MWNT) vias, using parallel channel conduction of each tube´s inner shells. By optimizing the structure of the interface between MWNTs and Ti bottom contact layers, we could obtain a via resistance of 0.7 Ω for a 2-μm-diameter via consisting of about 1000 MWNTs. The corresponding resistance of about 0.7 kΩ per MWNT indicates that most of the inner shells contribute to carrier conduction as an additional channel. The total resistance of the CNT vias that we fabricated is in the same order of magnitude as the theoretical value of W plugs and one order of magnitude higher than the theoretical value of Cu vias.

Keywords

carbon nanotubes; integrated circuit interconnections; nanotube devices; titanium; 0.7 kohm; 0.7 ohm; 2 micron; CNT vias; LSI interconnects; MWNT via resistance; MWNT/bottom contact layer interface; Ti-C; inner shell carrier conduction; low-resistance vias; multiwalled carbon nanotube vias; tube inner shell parallel channel conduction; Carbon nanotubes; Contact resistance; Dielectric substrates; Electric resistance; Laboratories; Large scale integration; Nanotechnology; Temperature; Wire; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International

Print_ISBN

0-7803-8752-X

Type

conf

DOI

10.1109/IITC.2005.1499995

Filename

1499995