DocumentCode :
1840914
Title :
A physically-based behavioral snapback model
Author :
Ida, Richard ; McAndrew, Colin C.
Author_Institution :
Freescale Semicond., Tempe, AZ, USA
fYear :
2012
fDate :
9-14 Sept. 2012
Firstpage :
1
Lastpage :
5
Abstract :
This paper presents an accurate and robust model for snapback in ESD clamps. Impact ionization, which triggers snapback, takes time to occur; our model introduces a behavioral time-dependent low resistance on-state current that, like real devices, smoothly and continuously turns on and off, thereby eliminating convergence issues during simulation.
Keywords :
electrostatic discharge; ionisation; ESD clamps; impact ionization; physically-based behavioral snapback model; time-dependent low resistance on-state current; Clamps; Computational modeling; Delay; Electrostatic discharges; Integrated circuit modeling; Robustness; Solid modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2012 34th
Conference_Location :
Tucson, AZ
ISSN :
0739-5159
Print_ISBN :
978-1-4673-1467-1
Type :
conf
Filename :
6333317
Link To Document :
بازگشت