The need for transient I-V measurement of device ESD response

Author

Meng, Kuo-Hsuan ; Rosenbaum, Elyse

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA

fYear

2012

fDate

9-14 Sept. 2012

Firstpage

1

Lastpage

8

Abstract

Tuning the parameters of an ESD device compact model to match the results of pulsed I-V measurements does not guarantee that the model will correctly reproduce the device response to arbitrary ESD waveforms. Transient I-V measurement data are demonstrated to improve the completeness of the device model assessment process, as demonstrated in this work for the case of the grounded-gate MOSFET protection device. If an accurate compact model is used, circuit simulations replicate device-tester interactions that occur during ESD testing.

Keywords

MOSFET; electrostatic discharge; semiconductor device models; semiconductor device testing; ESD device compact model; ESD testing; circuit simulations; device ESD response; device model assessment process; device-tester interactions; grounded-gate MOSFET protection device; transient I-V measurement data; Current measurement; Electrostatic discharges; Integrated circuit modeling; Pulse measurements; Semiconductor device measurement; Semiconductor device modeling; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2012 34th

Conference_Location

Tucson, AZ

ISSN

0739-5159

Print_ISBN

978-1-4673-1467-1

Type

conf

Filename

6333318