Title :
The need for transient I-V measurement of device ESD response
Author :
Meng, Kuo-Hsuan ; Rosenbaum, Elyse
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Abstract :
Tuning the parameters of an ESD device compact model to match the results of pulsed I-V measurements does not guarantee that the model will correctly reproduce the device response to arbitrary ESD waveforms. Transient I-V measurement data are demonstrated to improve the completeness of the device model assessment process, as demonstrated in this work for the case of the grounded-gate MOSFET protection device. If an accurate compact model is used, circuit simulations replicate device-tester interactions that occur during ESD testing.
Keywords :
MOSFET; electrostatic discharge; semiconductor device models; semiconductor device testing; ESD device compact model; ESD testing; circuit simulations; device ESD response; device model assessment process; device-tester interactions; grounded-gate MOSFET protection device; transient I-V measurement data; Current measurement; Electrostatic discharges; Integrated circuit modeling; Pulse measurements; Semiconductor device measurement; Semiconductor device modeling; Transient analysis;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2012 34th
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-4673-1467-1
