DocumentCode
1841009
Title
Temperature performance of sub-1V ultra-low power current sources
Author
Galeano, E. M Camacho ; Moreira, J.Q. ; Pereira, M.D. ; Cardoso, A.J. ; Montoro, C. Galup ; Schneider, M.C.
Author_Institution
Dept. of Electr. Eng., Fed. Univ. of Santa Catarina, Florianopolis
fYear
2008
fDate
18-21 May 2008
Firstpage
2230
Lastpage
2233
Abstract
This paper presents the temperature performance of two self-biased current sources. We have employed a simple topology to design 4 nA and 900 pA current references implemented in both 0.35 mum and 0.18 mum technologies, respectively. Experimental results showed that the current source implemented in 0.35 mum technology can operate at a supply voltage as low as IV and at 650 mV in 0.18 mum CMOS technology. The temperature performance of the current source is analyzed in this paper. The association of a very simple topology, an efficient design procedure, low voltage cascode transistor and low output conductance trapezoidal transistors has resulted in small area, ultra low power consumption and a line regulation better than 0.2%/V of supply voltage.
Keywords
CMOS integrated circuits; constant current sources; low-power electronics; transistors; CMOS technology; low voltage cascode transistor; self-biased current sources; size 0.18 mum; size 0.35 mum; temperature performance; trapezoidal transistors; ultra-low power current sources; Analog circuits; CMOS analog integrated circuits; CMOS technology; Energy consumption; Low voltage; MOSFET circuits; Performance analysis; Semiconductor device modeling; Temperature; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location
Seattle, WA
Print_ISBN
978-1-4244-1683-7
Electronic_ISBN
978-1-4244-1684-4
Type
conf
DOI
10.1109/ISCAS.2008.4541896
Filename
4541896
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