Effect of embedded-SiGe (eSiGe) on ESD TLP and VFTLP characteristics of diode-triggered silicon controlled rectifiers (DTSCRs)

Author

Mishra, Rahul ; Li, Junjun ; Di Sarro, James ; Campi, John ; Gauthier, Robert

Author_Institution

Semicond. R&D Center, IBM, Essex Junction, VT, USA

fYear

2012

fDate

9-14 Sept. 2012

Firstpage

1

Lastpage

5

Abstract

Effect of embedded-SiGe (eSiGe) in anode regions of DTSCRs during TLP and VFTLP testing is investigated. 100ns TLP results of DTSCRs with eSiGe show lower parasitic PNP beta, higher trigger voltage, higher holding voltage and premature snapback failure. Turn-on time measured during VFTLP testing is shown not to be affected by eSiGe due to the breakdown of SCR NW to PW/substrate junction during the initial overshoot.

Keywords

Ge-Si alloys; anodes; electrostatic discharge; failure analysis; semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; semiconductor diodes; semiconductor materials; thyristors; DTSCR; ESD TLP; SiGe; VFTLP characteristics; VFTLP testing; anode regions; diode-triggered silicon controlled rectifiers; holding voltage; parasitic PNP beta; premature snapback failure; substrate junction; time 100 ns; transmission lines pulser; trigger voltage; Anodes; Current measurement; Electrostatic discharges; Testing; Thumb; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2012 34th

Conference_Location

Tucson, AZ

ISSN

0739-5159

Print_ISBN

978-1-4673-1467-1

Type

conf

Filename

6333323