Title :
High-k metal gate-bounded Silicon Controlled Rectifier for ESD protection
Author :
Chang, Tzu-Heng ; Hsu, Yu-Ying ; Tsai, Tsung-Che ; Tseng, Jen-Chou ; Lee, Jam-Wem ; Song, Ming-Hsiang
Author_Institution :
TSMC, Hsinchu, Taiwan
Abstract :
An ultra-low trigger gate-bounded SCR using a high-k metal gate process is proposed, which has a superb immunity to protect thin oxide against CDM-like stresses without a resistor in series. This cell is fast triggered by the channel current injection and can meet the low leakage and capacitance requirements for highspeed I/O circuits.
Keywords :
electrostatic discharge; high-k dielectric thin films; thyristors; trigger circuits; CDM-like stresses; ESD protection; channel current injection; charge device model; high-k metal gate process; high-k metal gate-bounded silicon controlled rectifier; high-speed I/O circuits; thin oxide protection; ultralow trigger gate-bounded SCR; Electrostatic discharges; Hidden Markov models; Leakage current; Logic gates; Stress; Threshold voltage; Thyristors;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2012 34th
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-4673-1467-1
