DocumentCode
1841113
Title
Design of ESD protection cell for dual-band RF applications in a 65-nm CMOS process
Author
Chu, Li-Wei ; Lin, Chun-Yu ; Tsai, Shiang-Yu ; Ker, Ming-Dou ; Song, Ming-Hsiang ; Jou, Chewn-Pu ; Lu, Tse-Hua ; Tseng, Jen-Chou ; Tsai, Ming-Hsien ; Hsu, Tsun-Lai ; Hung, Ping-Fang ; Chang, Tzu-Heng ; Wei, Yu-Lin
Author_Institution
Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fYear
2012
fDate
9-14 Sept. 2012
Firstpage
1
Lastpage
5
Abstract
An ESD protection cell consisted of a diode, a silicon-controlled rectifier (SCR), a PMOS, and inductors was proposed for dual-band radio-frequency (RF) ESD protection. The proposed ESD protection cell was suitable for RF circuit designers for them to easily apply ESD protection in the dual-band RF circuits.
Keywords
CMOS integrated circuits; electrostatic discharge; radiofrequency integrated circuits; CMOS process; ESD protection cell design; PMOS; SCR; diode; dual-band RF circuits; dual-band radiofrequency ESD protection; inductors; silicon-controlled rectifier; size 65 nm; CMOS integrated circuits; Dual band; Electrostatic discharges; Radio frequency; Robustness; Stress; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2012 34th
Conference_Location
Tucson, AZ
ISSN
0739-5159
Print_ISBN
978-1-4673-1467-1
Type
conf
Filename
6333325
Link To Document